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本文研究了B2H6掺杂流量(B掺杂)对平面结构MOCVD-ZnO薄膜的微观结构和光电性能影响。XRD、SEM和AFM测试的研究结果表明,玻璃衬底上制备的ZnO薄膜具有(002)峰择优取向的平面结构,B掺杂使薄膜的球状晶粒尺寸变小,10 sccm流量时晶粒尺寸为~15 nm。ZnO∶B薄膜的最小电阻率为5.7×10-3Ω.cm。生长的ZnO薄膜(厚度d=1150 nm)在400~900 nm范围的透过率为82%~97%,且随着B2H6掺杂流量增大,光学吸收边呈现蓝移(即光学带隙Eg展宽)现象。
In this paper, the effects of B2H6 doping flux (B-doping) on the microstructure and optical properties of planar MOCVD-ZnO thin films were investigated. The results of XRD, SEM and AFM tests show that the ZnO thin films prepared on glass substrate have a (002) peak preferred orientation planar structure. The B doping results in the decrease of the spherical grain size of the films and the grain size Is ~ 15 nm. The minimum resistivity of ZnO: B film is 5.7 × 10 -3 Ω · cm. The growth of ZnO thin film (thickness d = 1150 nm) in the range of 400-900 nm is 82% ~ 97%. With the increase of B2H6 doping flux, the optical absorption edge shows a blue shift (ie, the optical bandgap Eg Widening) phenomenon.