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采用InP—PCl_3—H_2和In—PCl_3—H_2气相体系,在水平区熔生长的掺铬的半绝缘InP单晶(111)衬底上,生长了磷化铟外延层,制得了镜面状的外延片。外延层厚度为10～17μ,载流子浓度为10~(17)/cm~3,室温迁移率达到2034cm~2/v·s。叙述了磷化铟气相外延的设备装置,衬底制备和外延工艺条件,对I n源和多晶I nP源两种气相体系进行了比较,观察了衬区温度为650℃时PCl_3对衬底的气相腐蚀形貌,以及InP外延层表面的角锥生长。对试验结果进行了初步讨论,解释了载流子浓度偏高和迁移率较低的可能因素。
The InP-PCl_3-H_2 and In-PCl_3-H_2 gas phase systems were used to grow epitaxial layers of indium phosphide on the chromium-doped semi-insulating InP single crystal (111) sheet. The epitaxial layer thickness is 10-17μ, the carrier concentration is 10-17 / cm 3, and the room temperature mobility is 2034cm 2 / v · s. The apparatus, substrate preparation and epitaxial process conditions of indium phosphide epitaxy are described. The two kinds of gas phase systems, ie I n source and polycrystalline I nP source, are compared. When the liner temperature is 650 ℃, And the pyramidal growth on the surface of InP epitaxial layer. A preliminary discussion of the experimental results explained the possible reasons for the high carrier concentration and low mobility.