研究了材料参数对In0.53Ga0.47As光电探测器量子效率的影响。分析发现量子效率的变化主要取决于入射光的方向,P区与N区载流子浓度以及各区的表面复合速度和厚度。当光从P区入射时,P区载流子的表面复合速度、载流子浓度以及厚度对量子效率均产生极大的影响。N区材料参数对量子效率也有轻微的影响。在高载流子浓度范围内(n>1017cm-3),表面复合速度和厚度是主要影响因素。当光从N区入射时,载流子浓度n<1017cm-3时,N区表面复合速度为影响量子效率的主要因素;而当载流子浓度n>1016cm-3时,对量子效率产生影响的主要因素为材料厚度。 The effect of material parameters on the quantum efficiency of In0.53Ga0.47As photodetector was studied. The analysis shows that the change of quantum efficiency mainly depends on the direction of incident light, the carrier concentration in P region and N region, and the surface recombination velocity and thickness in each region. When light is incident from the P region, the surface recombination velocity, the carrier concentration and the thickness of the carriers in the P region have a great influence on the quantum efficiency. N-zone material parameters also have a slight effect on quantum efficiency. In the high carrier concentration range (n> 1017cm-3), surface recombination velocity and thickness are the main factors. When the incident light from the N region, the carrier concentration of n <1017cm-3, N region surface recombination velocity is the main factor affecting quantum efficiency; and when the carrier concentration n> 1016cm-3, the quantum efficiency The main factor is the material thickness.