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利用电子束蒸发方法将MgB2超导薄膜沉积到Al2O3(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型U(T,H)=U0(1-T/(Tc+δ))n(1-H/Hc2(0))m被建立用来分析超导薄膜磁通线的激活能和电阻转变,结果表明该模型能够在整个转变温度范围描述超导体磁通线的激活能和电阻转变.另外,利用多项式Hc2(t)=Hc2(0)+At+Bt2分析了MgB2/Al2O3超导薄膜的上临界磁场,获得了该超导薄膜的各向异性参数γ=Hc2ab(0)/Hc2c(0)=2.26.
The MgB2 superconducting thin films were deposited on the Al2O3 (001) substrate by electron beam evaporation.The resistance transformation under the ab plane of the parallel and perpendicular superconducting thin films was investigated by the standard four-lead method.An activation energy model, U (T, H) = U0 (1-T / (Tc + δ)) n (1-H / Hc2 (0)) m was established to analyze the activation energy and resistance transition of superconducting thin film magnetic flux lines. The activation energy and resistance transition of the superconductor flux line are described in the whole transition temperature range. In addition, the upper critical magnetic field of the MgB2 / Al2O3 superconducting thin film is analyzed by the polynomial Hc2 (t) = Hc2 (0) + At + Bt2, The anisotropy parameter of the superconducting film γ = Hc2ab (0) / Hc2c (0) = 2.26.