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研究了不同基区设计对多发射极指结构功率InGaP/GaAs异质结双极型晶体管热稳定性的影响。以发生电流增益崩塌的临界功率密度为热稳定性判定标准,推导了热电反馈系数Φ、集电极电流理想因子η和热阻Rth与基区掺杂浓度NB、基区厚度dB的理论公式。基于TCAD虚拟实验,观测了不同基区掺杂浓度和不同基区厚度分别对InGaP/GaAs HBT热稳定性的影响。结合理论公式,对仿真实验曲线进行了分析。结果表明,基区设计参数对热稳定性有明显的影响,其影响规律不是单调变化的。通过基区外延层参数的优化设计,可以改进多指HBT器件的热稳定性,从而为多指InGaP/GaAs HBT热稳定性设计提供了一个新的途径。
The influence of different base design on the thermal stability of multi-emitter finger structure power InGaP / GaAs heterojunction bipolar transistors was studied. The theoretical formula of pyroelectric feedback coefficient Φ, collector current ideality factor η, thermal resistance Rth and base doping concentration NB and base thickness dB is derived from the critical power density at which current gain collapse occurs. Based on the TCAD virtual experiment, the influence of different doping concentration and different base thickness on the thermal stability of InGaP / GaAs HBT was observed. Combined with the theoretical formula, the simulation experiment curve is analyzed. The results show that the design parameters of the base area have obvious influence on the thermal stability and the influence law is not monotonically changing. By optimizing the parameters of the base epitaxial layer, the thermal stability of multi-finger HBT devices can be improved, which provides a new approach for the thermal stability design of multi-finger InGaP / GaAs HBTs.