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利用磁过滤阴极电弧镀分别在硬质合金和高速钢基体上沉积厚度约2～3μm的TiN薄膜,并用MEVVA源离子注入装置对TiN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置(BSRF)的同步辐射光源,采用掠入射X射线衍射(GIXRD)的方法对TiN薄膜表面离子注入层的微观结构进行了分析研究。结果表明:未经过离子注入的TiN薄膜均存在特定方向的择优取向,而较小剂量(1×1017ions/cm2)的离子注入可以使晶粒细化、择优取向减弱或改变;当离子注入的剂量达到5×1017ions/cm2时,TiN薄膜表面离子注入层被非晶化。结合透射电镜的研究结果,观察到TiN薄膜表面非晶层的厚度约为50～100 nm,并简要地讨论了离子注入过程对微观结构的影响机制。
TiN thin films with a thickness of 2 ~ 3μm were deposited on the cemented carbide and high speed steel substrates respectively by means of magnetic filtration cathodic arc plating. Metal ions V + and Nb + were implanted into the TiN films by the MEVVA source ion implantation equipment. The synchrotron radiation source of Beijing Synchrotron Radiation Facility (BSRF) was used to analyze the microstructure of the ion-implanted layer on the surface of TiN film by GXRD. The results show that TiN films without ion implantation have the preferred orientation in specific directions, while the smaller dose (1 × 1017ions / cm2) ion implantation can make the grain refinement and the preferred orientation weaken or change. When the dosage of ion implantation When it reaches 5 × 10 17 ions / cm 2, the ion-implanted layer on the surface of the TiN film is amorphized. According to the results of TEM, the thickness of the amorphous layer on the surface of TiN film was observed to be about 50 ~ 100 nm, and the mechanism of the ion implantation process on the microstructure was briefly discussed.