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本文基于人体放电模型分别对肖特基势垒二极管的阴极和阳极进行同一电压脉冲下的多次放电,利用热电子发射理论、1/f噪声的迁移率涨落模型和白噪声理论,分别深入研究静电放电损伤对器件I-V和低频噪声的影响.结果表明,静电放电作用于肖特基二极管阴极时损伤更严重,噪声参量变化率更大.随着放电次数的增加,正向特性无变化,反向电流总体增大,偶有减小;而正向和反向1/f噪声均增大.鉴于噪声与应力条件下器件内部产生的缺陷与损伤有关,且更敏感,故可将低频噪声特性用作肖特基二极管的静电放电损伤灵敏表征工具.
Based on the human body discharge model, the cathodes and the anodes of the Schottky barrier diode are respectively discharged under the same voltage pulse for several times. Based on the hot electron emission theory, the 1 / f noise mobility fluctuation model and the white noise theory, The effects of electrostatic discharge damage on device IV and low frequency noise were studied.The results show that electrostatic discharge on the cathode of Schottky diode is more serious and the rate of change of noise parameter is larger.With the increase of discharge times, The reverse current generally increases, occasionally decreases, while the forward and reverse 1 / f noise increases. In view of the noise and stress generated within the device defects and damage, and more sensitive, so low-frequency noise Characteristics Used as a sensitive characterization tool for electrostatic discharge damage in Schottky diodes.