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工作在盖革模式下的雪崩型光电二极管(APD)和二极管阵列(APD array)具备单光子探测能力,在激光三维成像和极微弱光成像等领域具有广泛的应用前景。从雪崩型光电二极管的单光子响应特性入手,对光子探测成像机理及其固有缺陷进行了理论和实验研究。针对极微弱光更多地呈现粒子特征所产生的光子通量涨落和“群聚效应”对光子成像质量的影响,建立了光强恒定的相干光和混沌光经粗糙表面反射后的光子计数分布概率的反演模型,建立了基于泊松点过程的光子事件模型和入射光场的反演模型,为光子计数反演在光子成像中的应用奠定了理论基础。深入研究了瞬态门控和主动淬灭技术,抑制载流子的漂移和碰撞电离,缩短光电流的持续时间,提高了器件的时间响应特性和频率响应特性,以满足超快速光子成像系统的需要。最后,对光子成像技术最有竞争力的两个应用领域——微光像增强技术和三维激光成像雷达的关键应用技术进行了研究。
The avalanche photodiode (APD) and the array diode (APD array), which work in Geiger mode, have single-photon detection capability and have wide application prospect in the fields of laser three-dimensional imaging and very weak light imaging. Beginning with the single-photon response of avalanche photodiode, theoretical and experimental studies on photon detection imaging mechanism and its inherent defects are carried out. Aiming at the effect of the fluctuation of photon flux caused by the particle feature and the effect of cluster effect on photon imaging quality of very weak light, the coherent light of constant light intensity and the reflection of the chaotic light on the rough surface The model of photon event based on Poisson point process and the inversion model of incident light field are established for the inversion model of photon counting distribution probability, which lays a theoretical foundation for the application of photon counting inversion in photon imaging. In-depth study of the transient gating and active quenching technology to suppress carrier drift and impact ionization, shorten the duration of photocurrent and improve the time response characteristics and frequency response characteristics of the device to meet the ultra-fast photonic imaging system need. Finally, two key application fields of photon imaging technology, which are the most competitive one, are studied, such as the technology of microrefrared image enhancement and the technology of 3D laser imaging radar.