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第三届国际分子束外延会议于1984年8月1日至3日在美国旧金山召开。这是每两年一次的会议。前两届会议分别在日本和法国召开。下届会议将于1986年9月7日至10日在英国召开。 参加本届会议的代表有350人左右,向大会提交论文139篇。其中美国66篇,日本27篇,中国3篇。会议内容十分丰富,主要包含Ⅲ-Ⅴ族、Ⅱ-Ⅵ族及多元化合物和高熔点Si及金属与合金薄膜的制备与性能研究,特别侧重于超薄层、超晶格及多层异质外延材料的研究。所有这些研究都充分反映了MBE技术具有很强的工艺控制能力,已成为开拓新材料新器件的有力工具。下面介绍MBE技术在几个重要方而取得的进展。
The Third International Conference on Molecular Beam Epitaxy was held in San Francisco from August 1 to August 3, 1984. This is a biennial meeting. The first two sessions were held in Japan and France respectively. The next session will be held in the UK from September 7 to September 10, 1986. About 350 participants attended the conference and 139 papers were submitted to the conference. 66 in the United States, 27 in Japan and 3 in China. The meeting was very rich in content and consisted mainly of studies on the preparation and properties of group III-V, II-VI and multi-compound and high-melting-point Si and metal and alloy thin films, with particular emphasis on ultrathin layers, superlattices and multilayer heteroepitaxial Material research. All of these studies fully reflect the strong process control ability of MBE technology and have become a powerful tool for developing new devices and devices. The following describes the MBE technology in several important aspects of the progress made.