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248关状态偏压温度应力下带-缺陷隧道引起的高密度DRAM单元晶体管结漏电流的可靠性退化(Reliability Degradation of High Density DRAMCell Transistor Junction Leakage Current Induced byBand-to-defect Tunneling Under the Off-state-Bias-temperature Stress)-2001 International Re-liability Physics Symposium pp.1-6.
248 Off-State Bias Thermal Stress High-Density DRAM Cell Transistor Junction Leakage Current Induced by Band-to-Defect Tunneling Under the Off-state- Bias-temperature Stress) -2001 International Re-liability Physics Symposium pp. 1-6.