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随着大功率电子对抗技术的不断发展,频率选择表面(FSS)结构的功率耐受问题成为亟待解决的技术难题,而国内外鲜有相关报道。本文主要针对此问题展开了理论和仿真分析,并通过典型样件的试验结果对分析结果进行了验证。首先通过将电磁场理论和经典传热学理论相结合,对带有FSS结构和纯介质结构典型样件的功率耐受问题进行了理论建模和分析。然后,在多物理场仿真环境下对FSS加载夹层结构和纯介质夹层结构的典型样件在微波照射效应下的温升效应进行了建模和功率耐受性能计算。最后,制作了符合理论模型的FSS结构和纯介质结构典型样件,在微波暗室内对其功率耐受性能进行了实测验证。结果表明,在相同介质厚度的情况下,带有FSS结构的典型样件在同等强度的微波激励下会产生更高的温升。
With the continuous development of high-power electronic warfare technology, the problem of power-tolerant structure of frequency selective surface (FSS) has become a technical problem to be solved urgently, and few reports have been reported at home and abroad. In this paper, theoretical and simulation analysis is carried out mainly for this problem, and the results of the analysis are verified by the test results of typical samples. First of all, by combining the theory of electromagnetic field and classical theory of heat transfer, the power tolerance of typical sample with FSS structure and pure dielectric structure is modeled and analyzed theoretically. Then, the temperature rise effect of FSS loaded sandwich structure and pure dielectric sandwich structure under microwave radiation was modeled and the power performance was calculated under multiphysics simulation environment. Finally, a typical model of FSS structure and pure dielectric structure conforming to the theoretical model was fabricated, and its power endurance performance was verified in a darkroom. The results show that with the same dielectric thickness, typical samples with FSS structure produce higher temperature rise under the same intensity of microwave excitation.