理论和实验研究表明,在一定的应变和掺杂浓度下,Si基外延Ge薄膜能实现1.55μm光通信波段的直接带隙发光。讨论了Si基外延Ge材料的生长技术及其能带结构,结合本小组近年来在该领域所取得的成果,介绍了国内外各研究机构对Ge薄膜发光材料和器件的研究进展,展望了未来的发展趋势。 Theoretical and experimental studies show that, at a certain strain and doping concentration, the Si-based epitaxial Ge film can achieve the direct band gap emission in the 1.55μm optical communication band. The growth technology and band structure of Si-based epitaxial Ge material are discussed. Based on the achievements made by this group in recent years in this field, the research progress of Ge thin film luminescent materials and devices at home and abroad are introduced and the future is prospected The trend of development.