本发明提供适用于分离半导体装置的多层铜布线的、在与基底或者上层的无机绝缘膜连接的界面上机械强度和密合性优良并且作为整个膜的实际相对介电常数较低的绝缘性有机聚合物膜,该绝缘性有机聚合物膜是以环状硅氧烷和直链状硅氧烷为原料,通过等离子体激发使两者聚合而成的有机硅氧 The present invention provides a multilayer copper wiring suitable for separating semiconductor devices, which has excellent mechanical strength and adhesion at an interface with a base or an inorganic insulating film of an upper layer, and has low insulation properties as a whole having a low relative dielectric constant An organic polymer film which is an organosilicon oxide obtained by polymerizing both a cyclic siloxane and a linear siloxane by plasma excitation