讨论了金属氧化物半导体表面的气 -气、气 -固反应及其相应的电子过程 ,建立了分析气敏作用机理的理论模型 ,并提出了改进传感器性能的指导性意见。 The gas-gas, gas-solid reaction and its corresponding electronic processes on the surface of metal oxide semiconductor are discussed. A theoretical model for analyzing the mechanism of gas sensing is established. Guidance for improving the performance of the sensor is also proposed.