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采用直流磁控溅射方法,通过分别改变衬底温度及He分压来制备不同氦含量的钛膜。利用PBS、XRD、TEM及AFM分别对钛膜中的He含量、平均晶粒尺寸及膜的表面形貌进行分析。结果表明:在不同温度范围内,温度变化对所制备钛膜中He含量的影响明显不同;He含量与晶粒尺寸直接相关,氦原子进入钛膜后,抑制了晶粒的长大;随着钛膜中He与Ti的原子个数比由1.0%增加到11.9%,TEM测得的平均晶粒尺寸由约35 nm减小到约4 nm;选择合适的He分压,能够制备出He含量较高的氦钛膜。
DC magnetron sputtering method was used to prepare titanium films with different contents of helium by changing substrate temperature and partial pressure of He respectively. The content of He, the average grain size and the surface morphology of the film were analyzed by using PBS, XRD, TEM and AFM respectively. The results show that the influence of temperature on the content of He in the films is obviously different under different temperature range. The content of He is directly related to the grain size. The helium atoms inhibit the growth of the grains after entering the Ti film. The atomic ratio of He to Ti in titanium film increased from 1.0% to 11.9%, and the average grain size measured by TEM decreased from about 35 nm to about 4 nm. The suitable He partial pressure could produce He content Higher helium titanium film.