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用分子束外延 (MBE)设备制备了 Ga As/ Al As和 Ga As/ Si/ Al As异质结 ,通过 XPS分别研究了异质结界面处 Si层厚度为 0 .5 ML 和 1ML 对异质结带阶的调节 ,得到最大调节量为 0 .2 e V;通过 C- V法研究了异质结的Ga As层在不同温度下生长对 0 .5 ML Si夹层的影响 ,得到 Si夹层的空间分布随 Ga As层生长温度的升高而扩散增强的温度效应 ,通过深能级瞬态谱 (DL TS)研究了在上述不同温度下生长的 Ga As层的晶体质量 .
GaAs / AlAs and Ga As / Si / AlAs heterostructures were prepared by molecular beam epitaxy (MBE). The thickness of Si layer at the interface of heterojunction was 0.5 and 1 ML respectively The maximum adjustment amount is 0.2 eV. The influence of GaAs layer heterojunction growth at different temperatures on 0.5 ML Si interlayers was studied by C-V method, The spatial distribution of the GaAs layer grown at these different temperatures was investigated by deep-level transient spectroscopy (DL TS) with increasing temperature effects of increased diffusion of the GaAs layer.