论文部分内容阅读
提拉法生长的Nd:GSGG是性能优良的激光晶体,在固体强激光领域有重要的运用前景。采用液相共沉淀法制备了GSGG的前驱物,将前驱物在较低的温度下烧结,获得了GSGG多晶原料,用提拉法生长了无散射、气泡、云层、无开裂的(?)26 mm×45 mm的含钪石榴石Nd:GSGG晶体。用X射线衍射对GSGG的共沉淀前驱物在不同烧结温度下的相变情况进行了研究,表明在900℃烧结温度下, GSGG前驱物即可反应形成GSGG多晶,这比固相法合成GSGG料的反应温度低了200℃。同时,用X射线衍射对GSGG多晶、Nd:GSGG单晶的结构进行了研究,采用最小二乘法,以f(θ)=sinθ-sin1-Tθ(T=20)为外推函数,计算了GSGG多晶和Nd:GGG单晶的晶格参数,分别为1.257547 nm、1.256163 nm。它们之间的晶格参数差异可能是由于Ga组分的不同所引起的。
The Czochralski Nd: GSGG grown by Czochralski method is an excellent laser crystal and has an important application prospect in the field of solid-state intense laser. The precursors of GSGG were prepared by liquid coprecipitation method and the precursors were sintered at a lower temperature. The GSGG polycrystalline raw materials were obtained. The non - scattering, bubble, cloud and crack - free? 26 mm × 45 mm scandium garnet Nd: GSGG crystals. The phase transitions of GSGG coprecipitated precursors at different sintering temperatures were investigated by X-ray diffraction. The results show that GSGG precursors can react to form GSGG polycrystals at a sintering temperature of 900 ℃, which is better than GSGG The reaction temperature of the material is lower by 200 ℃. At the same time, the structures of GSGG polycrystal and Nd: GSGG single crystal were studied by X-ray diffraction. The least squares method was used to calculate the structure of GSGG single crystal with f (θ) = sin θ-sin1-Tθ The lattice parameters of GSGG polycrystal and Nd: GGG single crystal are 1.257547 nm and 1.256163 nm, respectively. The difference in the lattice parameters between them may be due to the difference in Ga composition.