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根据TCAD软件模拟的最优工艺条件成功研制了高压nMOS器件.测试结果表明器件的击穿电压为114V,阈值电压和最大驱动能力分别为1.02V和7.5mA(W/L=50).详细比较了器件的模拟结果和测试数据,并且提出了一种改善其击穿性能的方法.
The high voltage nMOS device was successfully developed according to the optimum process conditions simulated by TCAD software.The test results show that the breakdown voltage of the device is 114V and the threshold voltage and maximum driving capability are 1.02V and 7.5mA respectively (W / L = 50). The device simulation results and test data, and proposed a way to improve its breakdown performance.