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微电子加工过程中要用到许多化学品和大量的超纯水,随着集成电路微型化和结构复杂程度的提高,各种溶液介质由于自身存在较大的表面张力而不容易穿透进入到微纳结构的内部,可能影响刻蚀、各种清洗和干燥等过程的正常进行.因此,在微电子加工过程中迫切需要引入新的技术和方法来应对这种挑战.超临界流体,尤其是超临界二氧化碳溶液体系,由于其具有独特的物理化学性质,而且临界条件相对较温和,有希望作为有机溶剂和化学品水溶液的替代品应用于微电子加工过程.本文介绍了在微电子核心加工过程中有潜在应用前景的旋转涂敷、微纳尺寸显影、表面硅烷化等有超临界二氧化碳参与的技术,重点对作者基于二氧化碳溶液体系清除刻蚀后多孔低介电材料微结构中的残余物,以及超临界二氧化碳溶液干燥光刻胶方面的研究工作进行评述,并讨论了其今后的发展方向.
Microelectronics processing process to use a lot of chemicals and a large number of ultrapure water, with the miniaturization of integrated circuits and structural complexity increases, due to the existence of their own large surface tension of the solution medium is not easy to penetrate into The interior of the micro / nano structure may affect the normal process of etching, cleaning and drying, etc. Therefore, it is urgent to introduce new technologies and methods to deal with this challenge in microelectronic processing.Consideration of supercritical fluid, especially Due to its unique physicochemical properties and relatively mild critical conditions, supercritical carbon dioxide solution is promising as a substitute for organic solvents and chemical aqueous solutions in microelectronics processing. This article describes the microelectronic core processing In the potential application prospects of spin coating, micro-nano-size development, surface silanization and other supercritical carbon dioxide involved in the technology, focusing on the author based on the carbon dioxide solution system to remove etched porous low-dielectric material in the microstructure of the residue, As well as supercritical carbon dioxide solution to dry the photoresist research review, and discussed its future Direction of development.