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采用在发射区台面腐蚀时保留InGaP钝化层和去除InGaP钝化层的方法制备了两种InGaP/Ga As异质结双极晶体管(HBT)器件,研究了InGaP钝化层对HBT器件基区表面电流复合以及器件直流和射频微波特性的影响。对制备的两种器件进行了对比测试后得到:保留InGaP钝化层的HBT器件最大直流增益(β)为130,最高振荡频率(fmax)大于53 GHz,功率附加效率达到61%,线性功率增益为23 dB;而去除InGaP钝化层的器件最大β为50,f_(max)大于43 GHz,功率附加效率为57%,线性功率增益为18 dB。测试结果表明,InGaP钝化层作为一种耗尽型的钝化层能有效抑制基区表面电流的复合,提高器件直流增益,改善器件的射频微波特性。
Two kinds of InGaP / GaAs heterojunction bipolar transistor (HBT) devices were fabricated by keeping the InGaP passivation layer and removing the InGaP passivation layer on the surface of the emitter region. The effects of the InGaP passivation layer on the HBT device base region Surface current recombination and DC and RF microwave device characteristics. The comparison of the prepared two devices shows that the maximum DC gain (β) of the HBT with InGaP passivation layer is 130, the maximum oscillation frequency (fmax) is greater than 53 GHz, the power added efficiency reaches 61%, the linear power gain Is 23 dB. The maximum β of the device with InGaP passivation layer is 50, f max is greater than 43 GHz, the power added efficiency is 57% and the linear power gain is 18 dB. The test results show that the InGaP passivation layer as a depletion type passivation layer can effectively suppress the recombination of the surface current in the base region, improve the DC gain of the device, and improve the RF microwave characteristics of the device.