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采用射频溅射法,通过预先制备Ti和Ni 2种过渡层的工艺在3Cr13马氏体不锈钢基片上制备了硫化钨薄膜,通过与无过渡层的射频溅射WS2薄膜对比,研究了2种过渡层对薄膜性能的影响.3种样品的物相分析,表面形貌观察,微区化学成分测定,膜基结合力和薄膜摩擦系数测试等结果表明,Ti过渡层对硫化钨薄膜结构和S/W原子比没有明显的影响,对膜层的摩擦系数影响也不大,但薄膜耐磨性有所提高.而Ni过渡层虽对S/W原子比无明显影响,但却明显地提高薄膜Ⅱ型织构(基面取向)的强度,从而降低了薄膜的摩擦系数,提高了薄膜耐磨性.
Tungsten sulfide thin films were prepared on 3Cr13 martensitic stainless steel substrates by radio frequency sputtering and prepared by pre-preparation of Ti and Ni transition layers. By comparing with RF sputtering WS2 films without transition layer, two kinds of transition were studied Layer on the film performance.The phase analysis, surface morphology observation, micro-chemical composition determination, film-based adhesion and film friction coefficient test results of the three samples showed that the Ti transition layer on the structure of the tungsten sulfide film and the S / W atomic ratio had no significant effect on the coefficient of friction of the film is not significant, but the wear resistance of the film has increased.Although the transition layer Ni S / W atomic ratio had no significant effect, but significantly improve the film Ⅱ Type texture (base orientation) of the strength, thereby reducing the friction coefficient of the film and improve the wear resistance of the film.