用卤素 -钨灯作辐射热源快速热氮化 (RTN) ,在〈10 0〉和〈111〉晶向Si衬底上制备了Si_SiOxNy_Al电容 ,并测量了由低场到F_N隧穿电场范围的电子从N型Si积累层到超薄SiOxNy 膜的电流传输特性 .测量结果说明 ,两种不同晶向的低场漏电流没有多大区别 ,而在高场范围对〈10 0〉晶向电容结构的F_N隧穿电流要比〈111〉晶向电容结构的F_N隧穿电流显著增加 ,并对实验结果作了初步讨论 The Si_SiOxNy_Al capacitor was fabricated on the Si substrate by using a halogen-tungsten lamp as a radiant heat source for rapid thermal nitridation (RTN). The capacitance of Si_SiOxNy_Al was measured from the low field to the F_N tunneling electric field The current transfer characteristics from the N-type Si accumulation layer to the ultra-thin SiOxNy film indicate that the low-field leakage currents in the two different orientations are not much different from each other, The tunneling current is significantly higher than the F_N tunneling current of the <111> crystal orientation capacitor structure, and the experimental results are discussed preliminarily