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Heterojunction bipolar transistor (HBT) is of great interest for the application to microwave power and analog circuits.As known, decreasing bandgap energy of the base layer in HBT can result in a smaller turn-on voltage.Using InGaAs as a base material in GaAs HBT is a possible approach to achieve the aim.In this work, a novel InGaP/InGaAs/GaAs double heterojunction bipolar transistor (DHBT) structure with an InGaAs base was designed and grown by gas source molecular beam epitaxy (GSMBE).High-quality InGaAs/GaAs hetero epi-layers and a good doping figure were obtained through optimizing the layer structure and the growth condition.The DHBT devices of a 120 μm×120 μm emitter area were fabricated by normal process and the good DC performance was obtained.A breakdown voltage of 10 V and an offset voltage of just 0.4 V were achieved.These results indicate that the InGaP/InGaAs/GaAs DHBT is suitable for low power-dissipation and high power applications.