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为了研究高温贮存对GaAs光电阴极光电发射性能的影响,以2只GaAs光电阴极像增强器为研究对象,参照美军标MIL-STD-810F规定,对它们分别进行了70℃、48 h高温贮存实验。在实验过程中间隔一定时间测量一次其光电阴极灵敏度,随后利用Matllab软件和量子效率公式,计算了GaAs光电阴极参数,拟合了量子效率曲线。结果表明,GaAs光电阴极在70℃经过3~4 h贮存后,GaAs体材料与Cs-0表面层材料形成的光电发射层将达到稳定结构。研究成果为高性能GaAs光电阴极像增强器研制提供了技术支撑。
In order to study the effect of high temperature storage on the photoemission performance of GaAs photocathode, two GaAs photocathode intensifiers were studied. According to MIL-STD-810F regulations, they were respectively stored in high temperature for 70 ℃ and 48h . The photocathode sensitivity was measured once at a certain interval during the experiment. Then, the parameters of GaAs photocathode were calculated using Matllab software and quantum efficiency formula, and the quantum efficiency curves were fitted. The results show that after the GaAs photocathode is stored at 70 ℃ for 3 ~ 4 h, the photoemissive layer formed by GaAs material and Cs-0 surface layer will reach a stable structure. The research results provide technical support for the development of high performance GaAs photocathode image intensifier.