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β-FeSi2作为一种环境友好的半导体材料,颗粒化及非晶化正在成为提高其应用性能和改善薄膜质量、膜基界面失配度的有效途径.利用射频磁控溅射法在单晶Si基体上沉积Fe/Si多层膜,合成纳米β-FeSi2/Si多层结构.通过透射电子显微镜、高分辨电子显微术等分析手段,研究了多层结构和制备工艺之间的相互关系.研究结果表明,采用磁控溅射Fe/Si多层膜的方法,不需要退火就可以直接沉积得到β-FeSi2相小颗粒.β-FeSi2相颗粒尺寸在20nm以下,小的颗粒尺寸导致发光蓝移,带隙宽度变大,Edg值约为0.94eV.经过850℃的真空退火处理后,β-FeSi2相没有发生改变,颗粒尺寸变大、蓝移效果消失,β-FeSi2相小颗粒的尺寸仍小于100nm,结构的稳定性较好.
As an environment-friendly semiconductor material, β-FeSi2 is becoming an effective way to improve its application properties and improve film quality and film-substrate interfacial mismatch.By radio frequency magnetron sputtering, single-crystal Si Fe / Si multilayers were deposited on the substrate to synthesize nano-β-FeSi2 / Si multilayer structure. The relationship between the multi-layer structure and the preparation process was studied by transmission electron microscopy and high resolution electron microscopy. The results show that the use of magnetron sputtering Fe / Si multilayer film method, without annealing can be directly deposited β-FeSi2 phase small particles.β-FeSi2 phase particle size below 20nm, the small particle size leads to blue The width of the band gap becomes larger and the value of Edg is about 0.94eV.The β-FeSi2 phase does not change after vacuum anneal at 850 ℃, the particle size becomes larger and the blue-shift effect disappears. The size of β-FeSi2 phase small particles Still less than 100nm, the structural stability is better.