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通过工艺模拟软件TSUPREM,设计了一种复合多晶硅栅(DDPG-MOS FET)的制造工艺,并使用MEDICI软件对采用该工艺的器件的频率特性和瞬态特性进行分析。结果表明,DDPG-MOS制造工艺简单、完全与CMOS工艺兼容,其结构明显改善了传统MOSFET的多项性能,在射频领域具有很好的应用前景。
Through the process simulation software TSUPREM, a compound polysilicon gate (DDPG-MOS FET) manufacturing process is designed and the MEDICI software is used to analyze the frequency characteristics and transient characteristics of the device. The results show that the manufacturing process of DDPG-MOS is simple and fully compatible with the CMOS process. The structure of the DDPG-MOS significantly improves the performance of traditional MOSFETs and has good application prospect in the field of radio frequency.