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应用ＬＡＳ－２０００二次离子质谱表面分析系统作了如下测量：（１）测出ＨＬ－１装置的总出气量以及其主要出气组分的出气量百分比和出气峰值温度等参数；（２）对等离子体－表面相互作用进行了ＳＩＭＳ／蒙特卡洛互补分析，测出等离子体边界层中氢气量径向特征长度和氢粒子注入硅片的特征深度，估算出氢通量平均动力温度；（３）对硅收集探针的ＳＩＭＳ／ＡＥＳ分析表明，ＨＬ－１等离子体删削层中主要杂质组分为Ｏ、Ｃ、Ｎｉ、Ｍｏ和Ｃｒ，同时给出原子密度相对百分比；在ＨＬ－１装置中用原位蒸钛来吸氧、碳杂质，从而提高了等离子体纯度和品质；（４）定期检测表明，装置的器壁表面污染呈减弱趋势，这说明ＨＬ－１真空系统的设计研制及运行维护技术措施等是合适的。
The LAS-2000 secondary ion mass spectrometry surface analysis system was used to make the following measurements: (1) The total outgassing of HL-1 device and the percentage of outgassing and outflow peak temperature of its main components were measured; (2) Plasma-surface interaction SIMS / Monte-Carlo complementary analysis was performed to measure the radial feature length of hydrogen in the plasma boundary layer and the characteristic depth of the hydrogen particles injected into the silicon wafer to estimate the average hydrogen flux momentum temperature; (3 ) SIMS / AES analysis of the silicon collection probe showed that the major impurity components in the HL-1 plasma blanket were O, C, Ni, Mo and Cr, with relative percentages of atomic density; in HL-1 devices (4) periodic testing showed that the device wall surface contamination showed a weaker trend, indicating that the HL-1 vacuum system design and development and operation Maintenance of technical measures are suitable.