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稀土离子因其具有独特的电子结构和发光性能而被掺杂进ZnO量子点来提高它们的光催化作用和光致发光特性,这一领域被广泛的研究和应用。Sm~(3+)掺杂半导体ZnO量子点通过溶胶凝胶法成功制得。掺杂后的ZnO量子点的颗粒直径有效控制在5nm。通过XRD和TEM测试对ZnO量子点的结构形态进行表征,结果表明掺杂了Sm~(3+)的ZnO量子点其微观结构发生改变。此外,通过荧光光谱和分光光度计分析了稀土离子和ZnO基质之间的能量传递作用,结果显示掺杂后的ZnO量子点其发光性能明显改变。
Due to its unique electronic structure and luminescent properties, rare earth ions are doped into ZnO quantum dots to improve their photocatalytic activity and photoluminescence properties. This field has been widely studied and applied. Sm ~ (3+) doped semiconductor ZnO quantum dots were successfully prepared by sol-gel method. The doped ZnO quantum dot particle diameter is effectively controlled at 5nm. The structure of ZnO quantum dots was characterized by XRD and TEM. The results showed that the microstructure of ZnO quantum dots doped with Sm ~ (3+) changed. In addition, the energy transfer between the rare earth ions and the ZnO matrix was analyzed by fluorescence spectroscopy and spectrophotometer. The results showed that the luminescent properties of the doped ZnO quantum dots changed significantly.