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设计并制备出短波长p-i-n型背照AlGaN太阳盲紫外探测器,响应波段为225～255 nm,峰值波长为246nm。材料为在蓝宝石衬底上生长的背照式p-i-n型异质结结构,n型窗口层的AlxGa1-xN中的Al组分为71%,非故意掺杂吸收层中的Al组分为52%。零偏压下测得的暗电流为27 pA,光电流为2.7 nA,峰值响应度为23 mA/W。并在此基础上制备出大面阵太阳盲紫外探测器芯片,其像元数为128×128,光敏元直径为44μm,像元间距为50μm。
A short-wavelength p-i-n back-illuminated AlGaN solar-blind UV detector was designed and fabricated with a response wavelength of 225-255 nm and a peak wavelength of 246 nm. The material is a back-illuminated pin-type heterojunction structure grown on a sapphire substrate with 71% of Al in AlxGa1-xN for the n-type window layer and 52% of Al in the unintentionally doped absorber layer, . The dark current measured at zero bias is 27 pA, the photocurrent is 2.7 nA, and the peak responsivity is 23 mA / W. On this basis, a large area array solar blind UV detector chip was fabricated. The number of pixels was 128 × 128, the diameter of photosensitive cells was 44μm and the pixel spacing was 50μm.