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描述了用平面工艺技术研制基于硅多条的两维位置灵敏探测器的制备工艺技术及性能测试初步结果。这种探测器的灵敏面积为50 mm×50 mm。P掺杂面被等分成相互平行的长度为50mm,宽度为3mm的16条,相邻条之间的间隔为100μm。硅条P掺杂层是一层均匀分布的电阻层,利用电荷分除法,可以得到入射粒子在该条上的位置(Y位置)。当探测器工作在全耗尽偏压下时,大部分单条的反向漏电流<30nA。对239Puα粒子得到能量分辨率<2.5%,位置分辨<0.5 mm。
Describes the preparation technology and performance test results of two-dimensional position sensitive detectors based on silicon using planar technology. The sensitive area of this detector is 50 mm × 50 mm. The P-doped surface is equally divided into 16 parallel strips of 50 mm in length and 3 mm in width with an interval of 100 m between adjacent strips. P-doped silicon layer is a layer of uniform distribution of resistance layer, the use of charge-division method, you can get the location of the incident particles (Y position). When the detector is operating at fully depleted bias, most of the single reverse leakage current <30nA. 239Puα particle energy resolution of <2.5%, position resolution <0.5 mm.