论文部分内容阅读
氮化镓(GaN)材料已成功应用于光电子器件、高频功率器件等领域.近年来,由于GaN优异的材料特性,例如机械、热、化学稳定性以及生物兼容性等,使基于GaN的微机电系统(MEMS)得到了学术界的广泛关注.针对氮化镓MEMS结构的有效的图形化及释放技术是工艺研究的重点.设计、采用了一种全干法刻蚀技术,实现了(111)晶向硅衬底上的氮化镓基MEMS微结构的加工制造.利用提出的工艺方案,实现了多种悬浮GaN微结构的加工与测试表征实验.通过电子扫描显微镜(SEM)和光学轮廓仪进行了基本形貌表征;利用微拉曼光谱实验进行了加工结构的残余应力表征.
GaN has been successfully used in optoelectronic devices, high-frequency power devices, etc. In recent years, due to its excellent material properties such as mechanical, thermal, chemical stability and biocompatibility, GaN-based Electromechanical systems (MEMS) have received widespread academic attention.An efficient patterning and release technique for gallium nitride (MEMS) structures is the focus of process engineering.Designing a fully dry etching technique, the (111 ) To gallium nitride-based MEMS microstructures on silicon substrates were fabricated.The fabrication and characterization experiments of a variety of suspended GaN microstructures were carried out by using the proposed process scheme.According to the scanning electron microscopy (SEM) and optical profilometry The instrument was characterized by basic morphology. The residual stress of the machined structure was characterized by micro-Raman spectroscopy.