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SET/CMOS作为一种单电子晶体管与纳米级CMOS混合结构的新兴纳米电子器件,不仅实现两者优势互补,而且其突出的功能特性极大影响着电路微型化发展的道路。从SET/CMOS的串联和并联两种基本结构出发,阐述了各自的工作原理与特性、进而介绍了该混合器件目前在实验室制备、电路设计以及数值模拟研究方面的现状,最后讨论了器件在发展中尚需解决的问题及其应用前景。SET/CMOS的容错电路及互连结构新型设计将会加速实用化的进程,使集成电路产生质的飞跃,进而有望实现超高密度的信息存储和超高速信息处理,并将在未来智能计算机、通信设备和自动化方面发挥重要作用。
SET / CMOS, as a new kind of nanoelectronic device with single-electron transistor and nano-CMOS hybrid structure, not only realize the complementary advantages of both, but also its outstanding functional characteristics greatly affect the miniaturization of the circuit. Starting from the basic structure of SET / CMOS in series and in parallel, the working principle and characteristics of each are described. Then the current status of the hybrid device in the laboratory preparation, circuit design and numerical simulation are introduced. Finally, Problems to be solved in development and their application prospects. The new design of SET / CMOS fault-tolerant circuits and interconnection structures will speed up the practical process and lead to a qualitative leap in integrated circuits, which in turn will enable ultra-high-density information storage and ultra-high speed information processing. In the future, intelligent computers, Communications equipment and automation play an important role.