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近几年来,用离子注入的方法,直接在半绝缘GaAs衬底上注入Se、S、Si Te等施主型掺杂剂形成N型有源层,用以制造GaAs MES FET和GaAs集成电路的发展异常迅速。这不仅仅是因为离子注入工艺操作简单、可控性好,大面积均匀,无内界面等优点,更重要的是,它具有类似于硅工艺的平面型结构和大大地降低了成本。要使GaAs器件及其集成电路的应用象Si那样广泛和普及,必须具备廉价的GaAs材料和类似于硅平面工艺那样简便而成熟的制造技术。显然,半绝缘的GaAs衬底和离子注入技术则是实现这一目标的有效途径。然而,由于离子注入固有的特点,相对说来,要求半绝缘GaAs衬底必须具有1) 良好的热稳定性,在850℃以上,恒温1小时,其半绝缘性能保持不变。2) 低的掺Cr浓度,最好是不掺Cr的高纯衬底。3) 晶格比较完美、缺陷密度小于
In recent years, ion implantation has been used to implant GaAs MES FETs and GaAs integrated circuits by directly implanting donor dopants such as Se, S, Si Te into semi-insulating GaAs substrates to form N-type active layers Very fast. This is not only because the ion implantation process is simple in operation, good in controllability, large in area, without interfacial surface, etc. More importantly, it has planar structure similar to silicon process and greatly reduces the cost. For GaAs devices and their integrated circuits to be as ubiquitous and as ubiquitous as Si, they must have inexpensive GaAs materials and simple and sophisticated manufacturing techniques similar to silicon planar processes. Obviously, semi-insulating GaAs substrate and ion implantation technology is an effective way to achieve this goal. However, due to the inherent characteristics of ion implantation, relatively speaking, the semi-insulating GaAs substrate is required to have 1) good thermal stability, the semi-insulating properties remain unchanged at 850 ℃ for 1 hour. 2) Low Cr concentration, preferably high purity substrate without Cr. 3) The crystal lattice is perfect, the defect density is less than