论文部分内容阅读
本文叙述了实现固态放大器新的探索,它采用砷化镓或其他具有负级分迁移率的半导体化合物的限累器件,限累模式不象耿模、IMPATT模、高效模、以及诸如晶体管之类普通半导体器件那样受到渡越时间的限制,而有可能首先成为高功率固态放大器,事实上已有X波段射频脉冲功率超过1瓩的报导。肯尼迪及伊斯门预言限累振荡器脉冲功率水平可达12瓩。而从微带放大器中获得类似的脉冲功率也是可能的。器件的外型如图1所示,基本上是一个尖劈状微带传输线,用有源材料(本文采用砷化镓代替无源介质)如图示,传输线是分段的,于是可沿线在每点调节平均偏压,
This article describes a new exploration of solid-state amplifiers using gallium arsenide or other limited-mobility devices with semiconducting compounds with negative fraction mobility. Limit modes are not like GCC, IMPATT mode, high-efficiency mode, and transistors such as transistors Ordinary semiconductor devices are subject to transit time constraints, and may first become a high-power solid-state amplifier, in fact, has been X-band RF pulse power over 1 瓩 reported. Kennedy and Isling predict limited oscillator pulse power levels up to 12 瓩. It is also possible to obtain similar pulse power from microstrip amplifiers. The appearance of the device is shown in Figure 1, which is basically a wedge-shaped microstrip transmission line. The active material (GaAs instead of passive) is shown in the figure. The transmission line is segmented so that Adjust the average bias per point,