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LPCVD制备的氮化硅薄膜具有良好的阶梯覆盖性,但是这种薄膜的应力偏高,在石英工艺腔管使用到8μm后易形成剥落微粒。特别是半导体工艺发展到了亚微米阶段,这一问题对于产品良率的影响也越来越大。文中以垂直式LPCVD设备为研究对象,通过利用晶圆冷却时间,运用降低工艺腔体温度并使用N2Purge的方法来改善微粒状况。通过大量对比实验来得出最优温度设定。运用这种方式不但改善了LPCVD设备制备氮化硅膜的微粒状况,还延长了设备的维护周期,增加设备利用时间。
Silicon nitride films made by LPCVD have good step coverage, but the stress of this film is high, and the peeling of fine particles is likely to occur after using the quartz cavity tube to 8 μm. In particular, the development of the semiconductor process to the sub-micron stage, the impact of this issue on the yield of the product is also growing. In this paper, the vertical LPCVD equipment is taken as the research object, and by using the wafer cooling time, the method of reducing the temperature of the process chamber and using N2Purge to improve the particle condition. Through a large number of comparative experiments to arrive at the optimal temperature setting. Using this method not only improves the particle condition of the LPCVD device for preparing the silicon nitride film, but also prolongs the maintenance period of the device and increases the equipment utilization time.