论文部分内容阅读
提出了一种轻掺杂源漏结构结合异质材料双栅结构的MOSFET(简称LDDS-HMG-MOSFET)。使用二维非平衡格林函数(NEGF)对该结构进行仿真,其中非平衡格林函数的计算使用有限元法(FEM)。仿真结果表明,在该新型结构中,异质栅结构能够降低漏电流从而能够有效抑制漏极感应势垒较低效应(DIBL),LDDS结构能够增加有效栅长,有效抑制带带隧穿效应(BTBT)和热电子效应。因此,与传统单材料栅结构的MOSFET(简称C-MOSFET)相比,LDDS-HMG-MOSFET具有更加优越的性能、更低的漏电流和更大的开关电流比(Ion/Ioff)。
A MOSFET (LDDS-HMG-MOSFET) with a lightly doped source-drain structure and a double gate structure of heterogeneous material is proposed. The structure was simulated using a two-dimensional non-equilibrium Green’s function (NEGF), where the Finite Element Method (FEM) was used for the calculation of the non-equilibrium Green’s function. The simulation results show that, in the new structure, the heterojunction gate structure can reduce the leakage current so as to effectively suppress the DIBL. The LDDS structure can increase the effective gate length and effectively suppress the band tunneling effect BTBT) and hot electron effect. As a result, the LDDS-HMG-MOSFET offers superior performance, lower leakage current, and greater switching current ratio (Ion / Ioff) than conventional single-material-gate MOSFETs (referred to as C-MOSFETs).