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通过高磷处理和低温退火,可以大幅度提高半导体器件的成品率.试验结果表明,硅pnp管生产中的双线问题,可以通过高磷处理得到解决,并进而提高器件的稳定性和可靠性.文中指出,在高磷处理和低温退火过程中,器件的电流放大系数经历了先下降后上升的过程,并讨论了在控制器件h_(FB)值中运用此规律的可能性.
Through the high-phosphorus treatment and low-temperature annealing, can greatly improve the yield of semiconductor devices.Experimental results show that the two-wire silicon pnp tube production problems can be solved by high-phosphorus treatment, and thus improve the stability and reliability of the device It is pointed out that during the high phosphorus and low temperature annealing, the current amplification factor of the device goes through the process of first decreasing and then rising, and the possibility of using this rule in the control device h_ (FB) value is discussed.