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本文用瞬态电容、热激电容和热激电流方法测量n型硅中铂和钯的电学性质.n型硅中铂的二个能级是E_c-0.22eV和E_c-0.30eV.掺钯的n型硅中亦存在二个能级为E_c-0.23eV和 E_c-0.29eV.第二个深能级 E_c-0.29eV由于它的位置和浓度与高温淬火引起的能级相仿,所以这一能级的起因尚需进一步研究.
In this paper, the electrical properties of platinum and palladium in n-type silicon were measured by transient capacitance, heat shock capacitance and heat shock current.The two levels of platinum in n-type silicon were E_c-0.22eV and E_c-0.30eV. There are also two energy levels of n-type silicon: E_c-0.23eV and E_c-0.29eV. The second deep level E_c-0.29eV is similar to the energy level induced by high-temperature quenching because of its position and concentration The cause of the grade still needs further study.