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( Ni0.81 Fe0.19 )0.66Cr0.34 has a high resistivity and a crystal structure close to that of Ni0.81Fe0.19. The electrical and X-ray diffraction measurements prove that a thin NiFeCr seed layer induces a well(111)-oriented Ni0.81Fe0.19 film. Post-annealing treatment improves the magnetic properties of (Ni0.81 Fe0.19)0.66Cr0.34(45A)/Ni0.81Fe0.19(150A)/Ta(55A)thin film prepared under a deposition field , whereas the inter-diffu-sion of NiFe/ Ta deteriorates the magnetoresistance properties of the film.