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A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering.Their structural properties,Ⅰ-Ⅴcurves,photovoltaic effects and photo-response spectra were studied.The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated.It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction.The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/nSiC /p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing.It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si.There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.
A series of n-ZnO / n-SiC / p-Si and n-ZnO / p-Si heterojunctions were prepared by DC sputtering.Their structural properties, Ⅰ-Ⅴcurves, photovoltaic effects and photo-response spectra were studied. characteristics of n-ZnO / n-SiC / p-Si and n-ZnO / p-Si heterojunctions were investigated. It is found that the the photoelectric conversion efficiency of the n-ZnO / n-SiC / p-Si heterojunction is about four times higher than that of the n-ZnO / p-Si heterojunction. The photovoltaic response spectrum indicates that the photoresponse curve of n-ZnO / nSiC / p-Si increased more strongly than that of n-ZnO / p-Si with the wavelength increasing.It shows that the photoresponse of n-ZnO / p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si.There is one inflexion in the photocurrent response curve of the n-ZnO / p-Si heterojunction and It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO / n-SiC / p-Si heterojunction.