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[期刊论文] 作者:张健,何进,周幸叶,张立宁,马玉涛,陈沁,张勖凯,杨张,王睿斐,韩雨,陈文新,, 来源:Chinese Physics B 年份:2012
A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal–oxide semiconductor field-effect transistors (MOSFETs) is presented. The propo...
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