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Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved p
[期刊论文] 作者：樊继斌,丁晓甫,刘红侠,谢鹏飞,张袁涛,廖清良,,
来源：Chinese Physics B 年份：2016
High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization...
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