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The effects of drain scatterings on the electron transport properties of strained-Si diodes with bal
[期刊论文] 作者：亚森江·吾甫尔,买买提明·艾尼,买买提热夏提·买买提,阿不都克里木·阿不都热合曼,,
来源：Journal of Semiconductors 年份：2015
The effects of multiple scattering on the electron transport properties in drain regions are numerically investigated for the cases of strained-Si diodes with o...
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