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[期刊论文] 作者：Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,
来源：中国物理B（英文版） 年份：2010
This paper studies negative bias temperature instability (NBTI) under alteant and alteating current (AC)stress. Under alteant stress, the degradation smaller th...
,Study on the drain bias effect on negative bias temperature instability degradation of an ultra-sho
[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Ma Xiao-Hua,Cao Yan-Rong,Hao Yue,Zhang Yue,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Tian Wen-Chao,
来源：中国物理B（英文版） 年份：2010
...
,Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel
[期刊论文] 作者：Cao Yan-Rong,Hao Yue,Ma Xiao-Hua,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2009
The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage s...
[期刊论文] 作者：CAO Yan-Rong,HU Shi-Gang,MA Xiao-Hua,HAO Yue,
来源：中国物理快报（英文版） 年份：2008
Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study...
[期刊论文] 作者：Ma Xiao-Hua,Hao Yue,Wang Jian-Ping,Cao Yan-Rong,Chen Hai-Feng,
来源：中国物理（英文版） 年份：2006
Hot carriers injection (HCI) tests for ultra-short channel n-MOSFET devices were studied. The experimental data of short channel devices (75-90 nm), which does...
[期刊论文] 作者：MA Xiao-Hua,GAO Hai-Xia,CAO Yan-Rong,CHEN Hai-Feng,HAO Yue,
来源：中国物理快报（英文版） 年份：2010
...
[期刊论文] 作者：Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Cao Yan-Rong,Gao Zhi-Yuan,Gong Xin,
来源：中国物理（英文版） 年份：2007
The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an altating stress have...
,Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress a
[期刊论文] 作者：Hu Shi-Gang,Hao Yue,Ma Xiao-Hua,Cao Yan-Rong,Chen Chi,Wu Xiao-Feng,
来源：中国物理B（英文版） 年份：2009
...
[期刊论文] 作者：HU Shi-Gang,HAO Yue,MA Xiao-Hua,CAO Yan-Rong,CHEN Chi,WU Xiao-Feng,
来源：中国物理快报(英文版) 年份：2009
Hot-carrier degradation for 90 nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4 nm) gate oxide is investigated under the low gate voltage s...
,Negative Bias Temperature Instability Recovery under Negative Stress Voltage with Different Oxide T
[期刊论文] 作者：CAO Yan-Rong,MA Xiao-Hua,HAO Yue,ZHU Min-Bo,TIAN Wen-Chao,ZHANG Yue,
来源：中国物理快报（英文版） 年份：2011
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[期刊论文] 作者：ZHENG Xue-Feng,FAN Shuang,KANG Di,ZHANG Jian-Kun,CAO Yan-Rong,MA Xiao-Hua,HAO Yue,
来源：中国物理快报（英文版） 年份：2014
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[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Zhang Yue,Yu Lei,Zhu Zhi-Wei,Chen Hai-Feng,
来源：中国物理（英文版） 年份：2007
Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account,conventional direct current (DC) stress study on ne...
[期刊论文] 作者：Cao Yan-Rong,Yang Yi,Cao Cheng,He Wen-Long,Zheng Xue-Feng,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2015
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[期刊论文] 作者：Cao Yan-Rong,He Wen-Long,Cao Cheng,Yang Yi,Zheng Xue-Feng,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：HU Shi-Gang,CAO Yan-Rong,HAO Yue,MA Xiao-Hua,CHEN Chi,WU Xiao-Feng,ZHOU Qing-Jun,
来源：中国物理快报（英文版） 年份：2008
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxide...
[期刊论文] 作者：Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Zhang Jin-Cheng,Li Kang,Cao Yan-Rong,Zhang Jin-Feng,Zhou Peng-Ju,
来源：中国物理（英文版） 年份：2006
A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD)...
[期刊论文] 作者：Xu Sheng-Rui,Hao Yue,Zhang Jin-Cheng,Zhou Xiao-Wei,Cao Yan-Rong,Ou Xin-Xiu,Mao Wei,Du Da-Chao,Wang Hao,
来源：中国物理B（英文版） 年份：2010
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,Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobil
[期刊论文] 作者：Bi Zhi-Wei,Hu Zhen-Hua,Mao Wei,Hao Yue,Feng Qian,Cao Yan-Rong,Gao Zhi-Yuan,Zhang Jin-Cheng,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2011
...
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