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[期刊论文] 作者:SUNZhencui,CAOWentian,WEIQinqi, 来源:稀有金属:英文版 年份:2005
Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequenc...
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