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Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor cross
[期刊论文] 作者：Muhammad Ismail,Umesh Chand,Chandreswar Mahata,Jamel Nebhen,Sungjun Kim,
来源：材料科学技术（英文版） 年份：2022
In this study,resistive random-access memory (RRAM)-based crossbar arrays with a memristor W/TiO2/HfO2/TaN structure were fabricated through atomic layer deposition (ALD) to investigate synap-tic plasticity and resistive switching (RS) char......
Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy ba
[期刊论文] 作者：Chandreswar Mahata,Hassan Algadi,Muhammad Ismail,Daewoong Kwon,Sungjun Kim,
来源：材料科学技术（英文版） 年份：2021
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles (TaN-NPs)and sandwiched between Al-doped HfO2 layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM device.Transmission electron microscopy along with ene......
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