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,Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-tr
[期刊论文] 作者：Wang Hu,Xiong Hui,Wu Zhi-Hao,Yu Chen-Hui,Tian Yu,Dai Jiang-Nan,Fang Yan-Yan,
来源：中国物理B（英文版） 年份：2014
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,Effects of the Ⅴ/Ⅲ Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Proper
[期刊论文] 作者：TIAN Yu,DAI Jiang-Nan,XIONG Hui,ZHENG Guang,RYU My,FANG Yan-Yan,CHEN Chang-Qing,
来源：中国物理快报（英文版） 年份：2012
We investigate the effects of the Ⅴ/Ⅲ ratio of a low-temperature GaN buffer layer on the growth of the overlaying nonpolar a-plane GaN film grown on r-plane s...
,Properties of Si Doped Al0.4 Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quali
[期刊论文] 作者：YU Chen-Hui,LIU Cheng,HAN Xiang-Yun,KANG Wei,FANG Yan-Yan,DAI Jiang-Nan,WU Zhi-Hao,CHEN Chang-Qing,
来源：中国物理快报（英文版） 年份：2011
Si-doped Al0.4Ga0.6N (Si-Al0.4Ga0.6GN) epilayers grown on an AlGaN window layer (WL) with different Al contents are prepared using a high-quality A1N buffer lay...
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