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Controlled multilevel switching and artificial synapse characteristics in transparent HfAlO-alloy ba
[期刊论文] 作者：Chandreswar Mahata,Hassan Algadi,Muhammad Ismail,Daewoong Kwon,Sungjun Kim,
来源：材料科学技术（英文版） 年份：2021
Atomic layer deposition technique has been used to prepare tantalum nitride nanoparticles (TaN-NPs)and sandwiched between Al-doped HfO2 layers to achieve ITO/HfAlO/TaN-NP/HfAlO/ITO RRAM device.Transmission electron microscopy along with ene......
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