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[期刊论文] 作者:FENG Xiang-Xu,LIU Nai-Xin,ZHANG Ning,WEI Tong-Bo,WANG Jun-Xi,LI Jin-Min, 来源:中国物理快报(英文版) 年份:2014
We clarify the effect of the stress in GaN templates on the subsequent AlInGaN deposition by simply growing 150hm AlInGaN on a 30μm GaN template (sample 1) pre...
[期刊论文] 作者:Liu Jian-Ming,Zhang Jie,Lin Wen-Yu,Ye Meng-Xin,Feng Xiang-Xu,Zhang Dong-Yan,Steve Ding, 来源:中国物理B(英文版) 年份:2015
[期刊论文] 作者:FENG Xiang-Xu,LIU Nai-Xin,ZHANG Lian,ZHANG Ning,ZENG Jian-Ping,WEI Xue-Cheng,LIU Zhe, 来源:中国物理快报(英文版) 年份:2013
Undoped AIInGaN epilayers on GaN templates with different hydrogen (H2) and nitrogen (N2) carrier gas ratios (1:8,2:8,and 3:8 as samples 1,2 and 3,respectively)...
[期刊论文] 作者:ZHANG Ning,LIU Zhe,SI Zhao,REN Peng,WANG Xiao-Dong,FENG Xiang-Xu,DONG Peng, 来源:中国物理快报(英文版) 年份:2013
We demonstrate that the Mg-doping in barriers can partially screen the polarization fields of InGaN-based green light-emitting diodes.The photocurrent spectra s...
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