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[期刊论文] 作者：T.R.Lenka,G.N.Dash,A.K.Panda,,
来源：Journal of Semiconductors 年份：2013
A new depletion-mode gate recessed AlGaN/InGaN/GaN-high electron mobility transistor(HEMT)with 10 nm thickness of InGaN-channel is proposed.A growth of AlGaN ov...
Characterization of electrical properties of AlGaN/GaN interface using coupled Schr(o)dinger and Poi
[期刊论文] 作者：S.Das,A.K.Panda,G.N.Dash,
来源：城市道桥与防洪 年份：2012
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Characterization of electrical properties of AlGaN/GaN interface using coupled Schrodinger and Poiss
[期刊论文] 作者：S.Das,A.K.Panda,G.N.Dash,,
来源：Journal of Semiconductors 年份：2012
The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas(2-DEG) density at the interface on the Al mole...
Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temper
[期刊论文] 作者：J.Pradhan,S.R.Pattanaik,S.K.Swain,G.N.Dash,,
来源：Journal of Semiconductors 年份：2014
We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different struct...
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